Name: Mahin Anjum
Address: Saidpur, Nilphamari, Rangpur, Bangladesh
Phone:(+088) 1974036789, (+088) 1601212792
Email: mahinanjum558@gmail.com
I hold a B.Sc. Engg. degree in Electrical and Electronic Engineering (EEE) from BUET and am currently pursuing an M.Sc. in EEE, specializing in Electronics and Photonics. My undergraduate research focused on the design of a 26 GHz MM-wave Low-Noise Amplifier (LNA), and I am presently conducting research on TFET-based biosensors utilizing compound semiconductors. I am currently serving as a Lecturer at Bangladesh Army University of Science and Technology (BAUST), Saidpur.
Research on 'Advancements in MM-Wave LNA Design: Optimizing Performance with Modified DS and Post-Linearization Techniques at 26GHz'.
This paper presents a 26 GHz mm wave band low noise amplifier that achieves higher linearity and gain by utilizing three alternative linearization methods. In order to achieve high gain and low noise figure, the amplifier is constructed using 0.09um CMOS technology and uses a cascode structure as the primary amplifier stage. To improve the third-order interception point (IIP3), the proposed design makes use of post-linearization techniques and one strong Modified Derivative Superposition Branch. With a noise figure (NF) of 4.51 dB and a simulated gain (S21) of 13.154 dB, this work uses just 20.21mW from a 1.2V power supply. With an input return loss of -8.87dB and an output return loss of -4.04dB, the LNA achieves an IIP3 of 8.25dBm.